IGBT - IXDN75N120 HIGH VOLTAGE IGBT WITH OPTIONAL DIODE

Brand: GERMANY

Group: Semiconductor

Subgroup: IGBT

Model / Brand: IXYS

Stock: Please Call.

قیمت: 4,000,000 Tomman

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Keywords: IXDN75N120 IXYS IXYS IXYS IXYS IXDN IXDN75 HXDN75N IXDN75N120 IXDN75N120A ای جی بی تی ای جی بی تی ای جی بی تی مینی بلوک IGBT IGBT IGBT IGBT IXDN75N120A IXDN75N120A IXDN75N120A

 

 

Detail:

Maximum power dissipation (Pc) of IGBT transistor, W:

Maximum collector-emitter voltage |Uce|, V: 1200V

Collector-emitter saturation voltage |Ucesat|, V:

Maximum gate-emitter voltage |Ueg|, V:

Maximum collector current |Ic|, A: 120A

Maximum junction temperature (Tj), °C: 150

Rise time, nS: 0

Maximum collector capacity (Cc), pF:

Package: ISOTOP